What is the IGBT module?

IGBT insulated gate bipolar transistor is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It has the advantages of both the high input impedance of MOSFET and the low on-voltage drop of GTR. The saturation voltage of GTR is reduced, and the current-carrying density is high, but the driving current is relatively large. MOSFET drive power is very small, the switching speed is fast, but the turn-on voltage drop is large, and the current-carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage.